Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors

Bias-temperature instability in single-layer graphene field-effect transistors

Low Frequency Noise in Junction Field Effect Transistors

-Low frequency noise in four-terminal JFETs has been measured as a function of substrate (second gate) bias with temperature and drain current as additional variables. Sharp peaks of noise have been observed at some values of gate bias. The mechanism of low frequency noise caused by Schockley-Read-Hall (SRH) centres and the significance of charge capture processes in and near the channel are di...

Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors

Sergey L. RUMYANTSEV, Kristel FOBELETS, Thomas HACKBARTH, and Michael S. SHUR Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, U.S.A. Ioffe Institute of Russian Academy of Sciences, 194021 St-Petersburg, Russia Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road, London SW7 2BT...

Low-frequency electronic noise in single-layer MoS2 transistors.

Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between ...

Low-Frequency Noise Characterization of Ultra-shallow Gate N-channel Junction Field Effect Transistors

A recently developed technique for ultra shallow pn junction formation has been applied for the fabrication of ringgate n-channel junction field effect devices (JFET) devices. Several different geometries, gate formation parameters and channel doping profiles have been realized and characterized with respect to I-V and C-V characteristics both on wafer and after packaging. Low-frequency noise m...